Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors by Troy A Uhlman

Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors by Troy A Uhlman

In this research, the first ever neutron irradiation study of AlGaN/GaN MODFETs was conducted. Devices irradiated to a total 1 MeV Eq (Si) neutron fluence of 1.2x10 16 n/cm2 demonstrated the temperature dependence of irradiation and annealing. Devices irradiated at 80 K exhibited significant persistent electrical degradation at only 5.4 rad (Si), whereas those irradiated at elevated temperatures exhibit transient increases in gate and drain current up to 400 krad (Si). I-V measurements indicate substantial radiation-induced increased gate and drain currents occur only at low-temperature irradiations. The introduction of a high-density of donor defects is hypothesized as the primary cause of both increased values. Irradiating at temperatures gt; 300 K effectively reduces total accumulated dose effects even at 400 krad(Si).

SKU	Unavailable
ISBN 13	9781249836568
ISBN 10	1249836565
Title	Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors
Author	Troy A Uhlman
Condition	Unavailable
Binding Type	Paperback
Publisher	Biblioscholar
Year published	2012-10-17
Number of pages	192
Cover note	Book picture is for illustrative purposes only, actual binding, cover or edition may vary.