Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors
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Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors by Troy A Uhlman
In this research, the first ever neutron irradiation study of AlGaN/GaN MODFETs was conducted. Devices irradiated to a total 1 MeV Eq (Si) neutron fluence of 1.2x10 16 n/cm2 demonstrated the temperature dependence of irradiation and annealing. Devices irradiated at 80 K exhibited significant persistent electrical degradation at only 5.4 rad (Si), whereas those irradiated at elevated temperatures exhibit transient increases in gate and drain current up to 400 krad (Si). I-V measurements indicate substantial radiation-induced increased gate and drain currents occur only at low-temperature irradiations. The introduction of a high-density of donor defects is hypothesized as the primary cause of both increased values. Irradiating at temperatures gt; 300 K effectively reduces total accumulated dose effects even at 400 krad(Si).| SKU | Unavailable |
| ISBN 13 | 9781249836568 |
| ISBN 10 | 1249836565 |
| Title | Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors |
| Author | Troy A Uhlman |
| Condition | Unavailable |
| Binding Type | Paperback |
| Publisher | Biblioscholar |
| Year published | 2012-10-17 |
| Number of pages | 192 |
| Cover note | Book picture is for illustrative purposes only, actual binding, cover or edition may vary. |
| Note | Unavailable |