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Beam Injection Assessment of Defects in Semiconductors Martin Kittler

Beam Injection Assessment of Defects in Semiconductors par Martin Kittler

Beam Injection Assessment of Defects in Semiconductors Martin Kittler

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Résumé

Proceedings of the 5th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 98), held in Parkhotel Schloss Wulkow near Berlin, Germany, August/September 1998

Beam Injection Assessment of Defects in Semiconductors Résumé

Beam Injection Assessment of Defects in Semiconductors Martin Kittler

The 5th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 98) focussed on many theoretical and experimental aspects of this topic. The aim was to bring together specialists working in the fields of both fundamental research and applications. There were more than 80 participants from 15 countries all over the world.

Sommaire

  • Charge Collection Scanning Microscopy: Non-Conventional Applications
  • EBIC Study of Field Effect Transistors on Modulation-Doped AlGaAs/lnGaAs/GaAs Heterostructures
  • EBIC of Strained Si/SiGe 2DEGs Showing Lateral Electron Confinement
  • Laser Induced Mapping for Separation of Bulk and Surface Recombination
  • Analysis of Minority Carrier Diffusion in the Presence of a Dislocation Array: Effective Diffusion Length, Luminescence Efficiency and Dark Current
  • Detection and Characterisation of 'Sleeping' Defects in Silicon by LBIC Scan Maps at 80 K.
  • Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI Wafers
  • Characterization of Laser Structures by EBIC Measurements and Simulation
  • Evaluation of p-n Junction Position and Channel Length in Si Devices with Resolution of a Few Nanometers by Low-Energy EBIC
  • Monte Carlo Simulation of the Recombination Contrast of Dislocations
  • EBIC Characterization of Oxygen Precipitation and Denuded Zone in Intrinsically Gettered P-Type Czochralski Silicon
  • Impact of Phosphorus Diffusion on the Contamination Level of Dislocations in Deformed Float Zone Silicon as Studied by Beam Injection Techniques
  • LBIC Investigations of the Lifetime Degradation by Extended Defects in Multicrystalline Solar Silicon
  • Determination of the Surface Recombination Velocity and of Its Evolution in Monocrystalline Silicon by the Light Beam Induced Current Technique in Planar Configuration
  • SEM-EBIC Study of Defects in Epitaxial AlGaN Layers
  • Minority Carrier Diffusion Length in AlGaN: A Combined Electron Beam Induced Current and Transmission Microscopy Study
  • Ion Beam Induced Luminescence
  • Nanocharacterization of Semiconductors by Scanning Photoluminescence Microscopy
  • Cathodoluminescence Microscopy of Semiconductor Devices Using a Novel Detector with High Collection and Backscattered Electron Rejection Efficiency
  • Cathodoluminescence Study on ZnO and GaN
  • Cathodoluminescence Investigation of Diffusion Studies on the Arsenic Sublattice in Gallium Arsenide
  • Cathodoluminescence from Nanocrystalline Silicon Films in the Scanning Electron Microscope
  • The Spatial Distribution of Modulated CL Signal in Inhomogeneous Semiconductors with Large Diffusion Length
  • Effect of Plastic Deformation on the Luminescence of ZnSe Crystals
  • Effect of Erbidum on the Luminescence Properties of GaSb Crystals
  • Direct Imaging of the Crystalline and Chemical Nanostructure of GA,IN-Nitrides by Highly Spatially-, Spectrally- and Time-Resolved Cathodoluminescence
  • Cathodoluminescence and Photoluminescence Characterisation of Etched Mesas of ZnTe/ZnMgTe Quantum Wells under Tensile Strain
  • Cathodoluminescence Study of Defect Distribution at Different Depths in Films SiO2/Si
  • Cathodoluminescence Dependence on Beam Generation Conditions and Surface Properties of Materials
  • Neat Field Optics: Comeback of Light in Microscopy
  • Near-Field Cathodoluminescence (NF-CL) Investigations on Semiconducting Materials
  • Local Stress, Surface Reconstruction, and Bulk Defect Nucleation: An STM Study on Silicon
  • Correlative SEM/STM Study of Local Electronic Properties in Compound Semiconductors
  • Observation and Modelization of the Electrostatic Force due to the Local Variations of the Surface Potential by Electrostatic Force Microscopy (EFM)
  • The Sloc Positron Beam Technique - A Unique Tool for the Study of Vacancy-Type Defects in Semiconductors
  • Minority Carrier Transient Spectroscopy of Copper-Silicide and Nickel-Disilicide Precipitates in Silicon
  • Grain Growth of ZnSe Recrystallized in the Solid Phase
  • Lateral Doping Inhomogeneities as Revealed by -NEXAFS and -PES
  • Application of Surface Electron Beam Induced Voltage Method for the Contactless Characterization of Semiconductor Structures
  • Modification of Electronical and Optical Properties in SiO2 Films by Electron Beam Irradiation
  • Fabrication and Ellipsometric Investigation of Thin Films of Rare-Earth Oxides
  • Non-Destructive Investigations of Co and CoSi2-x Films on Si Substrate
  • Characterization of Laser-Irradiated CdxHg1-xTe Solid Solutions by Scanning Microscopy Method
  • Scanning Acoustic Microscopes for the Investigation of Ferroelectric Properties of Materials
  • The Nature of the Electronic States of Cu3Si-Precipitates in Silicon
  • TEM and Photoluminescence Investigations of InGaAs/GaAs Quantum Well Layers
  • The Assessment of Micro-Analytical Techniques to the Semiconductor Manufacturing Environment
  • Gate Oxide Defect Analysis Using Scanning Electron Microscopy (SEM)/Metal Oxide Semiconductor (MOS)/Electron Beam Induced Current (EBIC) with Sub-Nano Ampere Current Breakdown
  • Defect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current Technique
  • Analysis of Non-Uniform Contamination Profiles by Lifetime Data
  • Scanning Photoluminescence for Wafer Characterization
  • Failure Mode Analysis of a 0.25 m CMOS Technology by Scanning Electron and Ion Beams
  • Failure Analysis of Neutron-Irradiated MQW InGaAsP/InP Lasers by EBIC
  • Inline Analysis of Defects in Microelectronic Fabrication by Optical and Scanning Electron Microscopical Techniques
  • Application of Small Pulsed Ion Beams for Depth Profiling on Beveled Semiconductor Structures
  • Correlation of Cathodoluminescence and EBIC Contrast in GaAs/AlxGa1-xAs Quantum Well Structures
  • EBIC and Cathodoluminescence Study of the Bonded Silicon Wafers
  • Spatially Resolved Cathodoluminescence Study on CVD Homoepitaxial Diamond Film
  • Cathodoluminescence Study of Heavily Proton Irradiated Heteroepitaxial n+-p InP/Si Solar Cells
  • Electrical Properties of SiGe Epitaxial Layers for Photovoltaic Application as Studied by Scanning Electron Microscopical Methods
  • Stress Measurements in sub- m Si Structures Using Raman Spectroscopy
  • Two Dimensional Mapping of pn Junctions by Electron Holography
  • The Future of Beam Injection Techniques: Summary of the Round-Table Discussion Held at BIADS 98

Informations supplémentaires

GOR013156941
9783908450399
390845039X
Beam Injection Assessment of Defects in Semiconductors Martin Kittler
Martin Kittler
Solid State Phenomena
Occasion - Très bon état
Broché
Trans Tech Publications Ltd
19981218
550
N/A
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